GOWTHAMAN, Naveenbalaji; SRIVASTAVA, Viranjay M. Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices. Revista Tecnología en Marcha, [S. l.], v. 34, n. 6, p. Pág 10–16, 2021. DOI: 10.18845/tm.v34i6.5966. Disponível em: https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/5966. Acesso em: 17 jul. 2024.